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| MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 MECHANICAL DATA * * * * * COLLECTOR 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 2 EMITTER 0.006(0.15) 0.003(0.08) 0.055(1.40) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS ( @ TA = 25 C unless otherwise noted ) RATINGS O Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25 C o SYMBOL PD TJ TSTG VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1.Alumina=0.4*0.3*0.024in.99.5% alumina. 2."Fully ROHS Compliant", "100% Sn plating(Pb-free)". SYMBOL RqJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (2) (I C = -1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = -100uAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = -100uAdc, I C = 0) Base Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc) Collector Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -40 -40 -5.0 -50 -50 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (I C = -0.1mAdc, V CE = -1.0Vdc) (I C = -1.0mAdc, V CE = -1.0Vdc) (I C = -10mAdc, V CE = -1.0Vdc) (I C = -50mAdc, V CE = -1.0Vdc) (I C = -100mAdc, V CE = -1.0Vdc) Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) VCE(sat) hFE 60 80 100 60 30 -0.65 300 -0.25 -0.4 -0.85 -0.95 Vdc - VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -20Vdc, f= 100MHz) Output Capacitance (V CB = -5.0Vdc, I E = 0, f= 1.0MHz) Input Capacitance (V EB = -0.5Vdc, I C = 0, f= 1.0MHz) Input lmpedance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Voltage Feedback Ratio (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Small-Signal Current Gain (V CE = -10Vdc, I C = -10mAdc, f= 1.0kHz) Output Admittance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Noise Figure (V CE = -5.0Vdc, I C = -100uAdc, RS= 1.0kW, f= 1.0kHz) fT Cobo Cibo hie hre hfe hoe NF 250 2.0 0.1 100 3.0 4.5 10 12 10 400 60 4.0 MHz pF pF kW X 10 -4 umhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = -3.0Vdc, V BE = 0.5Vdc, I C = -10mAdc, I B1 = -1.0mAdc) td tr ts tf 35 35 225 75 ns (V CC = -3.0Vdc, I C = -10mAdc, I B1 = I B2 = -1.0mAdc) ns < Note : Pulse Test: Pulse Width<300ms,Duty Cycle-2.0% - RATING AND CHARACTERISTICS CURVES ( MMBT3906 ) 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5000 3000 2000 Cobo Cibo 1000 700 500 300 200 100 70 50 VCC= 40 V IC/IB= 10 5.0 3.0 2.0 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS (VOLTS) Figure 1 Capacitance 500 300 200 100 70 50 30 20 10 7 5 IC/IB= 10 500 300 200 t f,FALL TIME (ns) IC, COLLECTOR CURRENT (mA) Figure 2 Charge Data VCC= 40 V IB1 = IB2 IC/IB= 20 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB= 10 TIME (ns) tr @ VCC=3.0V 15 V 40 V 2.0 V td @ VOB=0V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3 Turn-On Time 5.0 4.0 3.0 2.0 1.0 0 0.1 SOURCE RESIST ANCE=2.0k IC= 100uA 0.2 0.4 1.0 2.0 4.0 10 20 40 100 SOURCE RESIST ANCE=200W IC= 1.0 mA SOURCE RESIST ANCE=200W IC= 0.5 mA SOURCE RESISTANCE=2.0k IC= 50uA 12 f = 1.0 kHz NF, NOISE FIGURE (dB) Figure 4 Fall Time IC= 1.0 mA IC= 0.5 mA NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 0.2 0.4 1.0 IC= 50uA IC= 100uA 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) Rg, SOURCE RESIST ANCE (KOHMS) Figure 5 Figure 6 RATING AND CHARACTERISTICS CURVES ( MMBT3906 ) 300 hoe, OUTPUT ADMITTANCE (umhos) 100 70 50 30 20 hfe, DCCURRENT GAIN 200 100 70 50 30 10 7 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 7 Current Gain Figure 8 Output Admittance hre, VOLTAGE FEEDBACK RATIO(x10-4) IC, COLLECTOR CURRENT (mA) 20 hie, INPUT IMPEDANCE (KOHMS) 10 7.0 5.0 3.0 2.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 9 Input lmpedance TJ= 25OC 0.8 V,VOLTAGE (V) Figure 10 Voltage Feedback Ratio QV, TEMPERATURE COEFFICIENTS (mV/oC) 1.0 VBE(sat)@IC/IB=10 VBE@VCE=1.0V 1.0 0.5 0 0.5 +25OC TO +125OC 1.0 1.5 2.0 0 20 -55OC TO +25OC qVCFOR VCE(sat) +25OC TO +125OC 0.6 0.4 0.2 0 VCE(sat)@IC/IB=10 -55OC TO +25OC qVBFOR VBE(sat) 40 60 80 100 120 140 160 180 200 1.0 2.0 5.0 10 20 50 100 200 IC,COLLECTOR CURRENT(mA) IC, COLLECTOR CURRENT (mA) Figure 11 "ON" Voltages Figure 12 Temperature Coefficients DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. |
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